Перегляд за автором "Zaabat, M."

Сортувати за: Порядок: Результатів:

  • Accurate numerical modelling the GaAs MESFET current-voltage characteristics 
    Merabtine, N.; Khemissi, S.; Zaabat, M.; Belgat, M.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional ...
  • Active layer – semi-insulating substrate interface effect on GaAs MESFET components 
    Belgat, M.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space ...
  • An improved contribution to optimize Si and GaAs solar cell performances 
    Merabtine, N.; Amourache, S.; Bouaouina, M.; Zaabat, M.; Saidi, Y.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In resent years a considerable effort (experience, numerical simulation and theoretical prediction models) has been devoted to the study of photovoltaic devices characterised by high efficiency and low cost. The present ...
  • Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs 
    Khemissi, S.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in ...
  • New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET 
    Merabtine, N.; Amourache, S.; Saidi, Y.; Zaabat, M.; Kenzai, Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. ...
  • Two-dimensional modeling the static parameters for a submicron field-effect transistor 
    Zaabat, M.; Draid, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor ...