Перегляд за автором "Neimash, V.B."

Сортувати за: Порядок: Результатів:

  • Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon 
    Neimash, V.B.; Puzenko, O.O.; Kraitchinskii, A.M.; Krasko, M.M.; Putselyk, S.; Claeys, C.; Simoen, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations ...
  • Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum 
    Neimash, V.B.; Poroshin, V.M.; Shepeliavyi, P.Ye.; Yukhymchuk, V.O.; Melnyk, V.V.; Makara, M.A.; Kuzmich, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis ...