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  • Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in ...
  • Elasto-Plastic Behavior of Aluminum Foams Subjected to Compression Loading 
    Silva, H.M.; Carvalho, C.D.; Peixinho, N.R. (Прикладная механика, 2017)
    The non-linear behavior of uniform-size cellular foams made of aluminum is investigated when subjected to compressive loads while comparing numerical results obtained in the Finite Element Method software (FEM) ANSYS ...
  • Elastoplastic Damage Model for Concrete under Triaxial Compression and Reversed Cyclic Loading 
    Zhang, J.; Ma, L.; Zhang Z.X. (Проблемы прочности, 2018)
    The elastoplastic damage model for concrete is elaborated that can be applied to various stress states.
  • Elastoplastic Model of Sand under Complex Loading 
    Wan, Z.; Song, C.C.; Gao, W.S. (Проблемы прочности, 2018)
    The unified hardening model for overconsolidated clay is extended to the cyclic model considering the stress–strain relationship for sands by adopting the rotational hardening rule. The equations for the normal consolidated ...
  • E-Learning Models Analysis for Lifelong Learning 
    Synytsya, K.M. (Кибернетика и вычислительная техника, 2017)
    Introduction. E-learning models reflect various aspects of ICT application in education but they are not intended for reflecting long periods of time, multiple sources of information and knowledge involved or dynamic control ...
  • Electodiposition kinetics, structure and optical properties of cadmium sulfide films 
    Klochko, N.P. (Functional Materials, 2007)
    The selection of the optimal regimes for electrodeposition of near-stoichiometric cadmium sulfide (CdS) layers has been provided by means of voltammetric studies of cadmium and sulfur separate and joint electrodeposition ...
  • Electret effect in intercalated crystals of the A³B⁶ group 
    Grygorchak, I.; Voitovych, S.; Stasyuk, I; Velychko, O.; Menchyshyn, O. (Condensed Matter Physics, 2007)
    Measurements of dielectric properties of Ni-intercalated GaSe and InSe have been performed. The present study is aimed at the investigation of the low-admixture region where the intercalation induced electret effect occurs. ...
  • Electret properties of Ca₅Nb₄TiO₁₇ with five-layered perovskite-like structure 
    Titov, Y.O.; Slobodyanik, M.S.; Belyavina, N.M.; Nakonechna, O.I.; Chumak, V.V.; Kuzmin, R.M. (Functional Materials, 2017)
    It is found that ceramic thermoelectret based on Ca₅Nb₄TiO₁₇ with five-layered slab perovskite-like structure is characterized by high values of potential external electric field VS which demonstrates enchanced stability ...
  • Electrical activity of misfit dislocations in GaAs-based heterostructures 
    Wosinski, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level ...
  • Electrical and deilectric properties of CdWO₄ crystals 
    Shevchuk, V.N.; Kayun, I.V. (Functional Materials, 2006)
    Electrophysical investigations of CdWO₄ crystals have been carried out by thermostimulated polarization and thermoelectret state depolarization in interrelation with temperature dependences 290-550 K of DC conductivity and ...
  • Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions 
    Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.N.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
  • Electrical and magnetic properties of La₁₋xAgyMnO₃ recrystallized ceramics 
    Melnikov, O.V.; Gorbenko, O.Yu.; Kaul, A.R.; Aliev, A.M.; Gamzatov, A.G.; Abdulvagidov, Sh.B.; Batdalov, A.B.; Demin, R.V.; Koroleva, L.I. (Functional Materials, 2006)
    A method is presented to obtain silver-containing lanthanum manganites La₁₋xAgyMnO₃₊δ exhibiting GMR. Ceramic samples possessing high Curie temperature and showing a sharp maximum of metal-insulator transition near Curie ...
  • Electrical and optical parameters of Cu₆PS₅I-based thin films deposited using magnetron sputtering 
    Studenyak, I.P.; Bendak, A.V.; Izai, V.Yu.; Guranich, P.P.; Kúš, P.; Mikula, M.; Grančič, B.; Zahoran, M.; Greguš, J.; Vincze, A.; Roch, T.; Plecenik, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆PS₅I-based thin films were deposited onto silicate glass substrates by nonreactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscopy. ...
  • Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates 
    Olenych, І.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the ...
  • Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact 
    Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Electrical and thermal conductivity of graphite-metal composites 
    Stelmakh, O.I.; Vovchenko, L.L.; Matzui, V.I. (Functional Materials, 2004)
    Electrical and thermal conductivity of graphite-Co(Ni) composites on the basis of two different types of thermoexfoliated graphite, TEG(1) and TEG(2) have been studied. The distinctions in electric resistivity (pD) between ...
  • Electrical charging of helium and hydrogen droplets 
    Tito E. Huber; Frank Boccuzi (Физика низких температур, 1998)
  • Electrical conductivity of solid solution of Co(II)-Zn dihydrophosphate and its thermolysis products 
    Antraptseva, N.M.; Solod, N.V.; Povshuk, V.A. (Functional Materials, 2015)
    Dependence of the specific electrical conductivity value of the solid solution with composition Co₁-xZnx(H₂PO₄)₂•H₂O(0 < x < 1.0) and products of its partial or complete dehydration from temperature and duration of heat ...
  • Electrical connectors for surface solderless mounting 
    Yefimenko, A.A. (Технология и конструирование в электронной аппаратуре, 2012)
    The article describes the features of development, possibilities of manufacture and application of electrical connectors for surface mounting with flexible printed cables and elastomer liners. With regard to characteristics, ...
  • Electrical effects in superfluid helium. I. Thermoelectric effect in einstein's capacitor 
    Ledenyov, D.O.; Ledenyov, V.O.; Ledenyov, O.P. (Вопросы атомной науки и техники, 2014)
    The Einstein's ideas about the thermodynamical fluctuational nature of some electrical phenomena and the difference of electrical potentials U in a capacitor at temperature T were proposed in 1906-1907. On base of these ...