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  • Deformation resistance and structure-forming processes of iron aluminides in hot rolling 
    Suchanek, P.; Schindler, I.; Kratochvil, P.; Hanus, P. (Проблемы прочности, 2008)
    We have developed simple mathematical models of mean equivalent stress dependence on temperature and strain for selected iron aluminides. Four similar melts with 16.5-19.2 wt.% of Al, 4 wt.% of Cr and with various contents ...
  • Deformations of circle-valued Morse functions on surfaces 
    Maksymenko, S.I. (Український математичний журнал, 2010)
    Let M be a smooth connected orientable compact surface and let Fcov(M,S1) be a space of all Morse functions f : M → S₁ without critical points on ∂M such that, for any connected component V of ∂M, the restriction f : V → ...
  • Deformations of the Canonical Commutation Relations and Metric Structures 
    D'Andrea, F.; Lizzi, F.; Martinetti, P. (Symmetry, Integrability and Geometry: Methods and Applications, 2014)
    Using Connes distance formula in noncommutative geometry, it is possible to retrieve the Euclidean distance from the canonical commutation relations of quantum mechanics. In this note, we study modifications of the distance ...
  • Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios 
    Kladko, V.P.; Safriuk, N.V.; Stanchu, H.V.; Kuchuk, A.V.; Melnyk, V.P.; Oberemok, A.S.; Kriviy, S.B.; Maksymenko, Z.V.; Belyaev, A.E.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and ...
  • Deformed Heisenberg Algebra in the Theory of Liquid 4He 
    Vakarchuk, I.O. (2010)
    We propose a method to consider anharmonic oscillations of the density of a Bose fluid using a deformed Heisenberg algebra. The Hamiltonian of a Bose fluid consists of a main harmonic part and an anharmonic part which is ...
  • Deformed Oscillators with Two Double (Pairwise) Degeneracies of Energy Levels 
    Gavrilik, A.M.; Rebesh, A.P. (Symmetry, Integrability and Geometry: Methods and Applications, 2007)
    A scheme is proposed which allows to obtain special q-oscillator models whose characteristic feature consists in possessing two differing pairs of degenerate energy levels. The method uses the model of two-parameter deformed ...
  • Deformed su(1,1) Algebra as a Model for Quantum Oscillators 
    Jafarov, E.I.; Stoilova, N.I.; Van der Jeugt, J. (Symmetry, Integrability and Geometry: Methods and Applications, 2012)
    The Lie algebra su(1,1) can be deformed by a reflection operator, in such a way that the positive discrete series representations of su(1,1) can be extended to representations of this deformed algebra su(1,1)γ. Just as the ...
  • Degeneracy effect of dynamical properties of quasi-particles of electronic origin in semiconductor materials 
    Suprun, A.D.; Shmeleva, L.V. (Functional Materials, 2012)
    The general dynamical properties of free quasi-particles are analyzed. Analyzed also the conditions under which the description of the dynamic properties of the quasi-particles is almost identical with those of real ...
  • Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons 
    Vasetskii, V.M.; Poroshin, V.N.; Ignatenko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier ...
  • Degenerate Series Representations of the q-Deformed Algebra so'q(r,s) 
    Groza, V.A. (Symmetry, Integrability and Geometry: Methods and Applications, 2007)
    The q-deformed algebra so'q(r,s) is a real form of the q-deformed algebra Uq'(so(n,C)), n = r + s, which differs from the quantum algebra Uq(so(n,C)) of Drinfeld and Jimbo. We study representations of the most degenerate ...
  • Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons 
    Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P.; Shlapatska, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The study of electrical and optical characteristics of GaP LEDs irradiated with electrons (E = 2 MeV, Ф = 0…10¹⁵ cm⁻²) was performed. Especial interest was focused on appearing of S-type instability in current-voltage ...
  • Degradation of lignin in cassava residue with Phanerochaete chrysosporium by solid state cultivation 
    Bin Xu; Huixing Li; Chaojun Du; Ying Wang; Bin Li (Functional Materials, 2016)
    Cassava residue is a lignocellulosic waste byproduct in cassava-based ethanol production. Bioconversion of this waste to methane is one choice to solve its disposal problem. The bioconversion of lignocellulosic wastes could ...
  • Degradation of phenolic compounds in water by non-thermal plasma treatment 
    Hsu-Hui Cheng; Shiao-Shing Chen; Kazuharu Yoshizuka; Yung-Chih Chen (Химия и технология воды, 2012)
    A stainless-steel hollow needle type anode was used in the reactor to treat industrial wastewater by gas-liquid phase non-thermal plasma by corona discharge. The results showed that the short electrode gap, 1 cm, has a ...
  • Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects 
    Dubovyi, V.K.; Kanevsky, S.O.; Litovchenko, P.G.; Opilat, V.Ya.; Tartachnik, V.P. (Functional Materials, 2005)
    The GaP diode radiation-induced degradation has been established to be caused mainlу bу the reduction of the current carrier lifetime resulting from introduction of non-radiative deep levels of the radiation-induced defects. ...
  • Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors 
    Popovych, K.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the ...
  • Degradation processes in LED modules 
    Sorokin, V.M.; Kudryk, Ya.Ya.; Shynkarenko, V.V.; Kudryk, R.Ya.; Sai, P.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Electrical-heat-light degradation model of a light-emitting module has been developed in this work. The Monte-Carlo method was used to calculate the reliability time of LED modules with different halfwidth of LED chip ...
  • Degradations of semiconductor devices under pulsed heat overloading 
    Chumakov, V.I. (Вопросы атомной науки и техники, 2000)
    The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal dependencies of the temperature under different forms of pulse of current are ...
  • Degree of local depolarization determined for fields of laser radiation scattered by multilayer birefringent networks of protein crystals 
    Ushenko, Yu.A.; Angelsky, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Represented in this work are theoretical basics for description of fields created by scattered coherent radiation with using the new correlation parameter – degree of local depolarization (DLD). The authors have adduced ...
  • de Haas–van Alphen effect and Fermi surface properties in rare earth and actinide compounds 
    Ōnuki, Yoshichika; Settai, Rikio (Физика низких температур, 2012)
    Fermi surface properties in rare earth (R) and actinide (An) compounds of RX3 (X: Al, Ga, In, Si, Ge, Sn, Pb), AnX₃ , RTIn₅ (T: transition metal), and AnTGa5 are clarified as a function of the number of valence electrons. The ...
  • De Haas-van Alphen effect and superconductivity 
    Gor`kov, L.P.; Landau, L.D. (Физика низких температур, 1999)
    The problem of the robust de Haas-van Alphen oscillations seen experimentally in mixed superconducting state is discussed. The new threshold mechanism is suggested to explain persistence of the quantum oscillations deep ...