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  • Defect formation in CsI-CsBr mixed crystals 
    Garapyn, I.V.; Hud, I.Z.; Pavlyk, B.V. (Functional Materials, 2005)
    The defect structure of Csl-CsBr mixed crystals has been studied by electroconductivity and thermostimulated depolarization current (TSDC) methods. The formation of Csl₀.₉₃Br₀.₀₇ solid solution is found to be accompanied ...
  • Defect formation in the intermediate layers of YBa₂Cu₃O₇₋δ superconductors depending on oxygen сontents 
    Adonkin, V.T.; Gorelov, B.M.; Ogenko, V.M.; Melnikov, V.S.; Kevdina, I.B.; Shantorovich, V.P. (Поверхность, 2002)
    In YBa₂Cu₃O₇₋δ superconductors with 0≤δ<0.6 the defect formation in the intermediate layers depending on oxygen content was revealed under γ-irradiation with doses 8-250 kGy. In YBa₂Cu₃O₇ the subthreshold creation of Ba, ...
  • Defect formation on diffusive layers of ZnSe:Sn and ZnSe:Mg 
    Gryvul, V.I.; Makhniy, V.P.; Tkachenko, I.V. (Functional Materials, 2007)
    Equilibrium concentrations of point defects in ZnSe layers obtained by Sn and Mg diffusion fron vapor phase at 1150 K have been calculated using the quasi-chemical reaction method. The calculated results are compared to ...
  • Defect reorganization induced by pulsed magnetic field in porous InP 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination ...
  • Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers 
    Semenova, G.N.; Venger, E.F.; Korsunska, N.O.; Klad’ko, V.P.; Borkovska, L.V.; Semtsiv, M.P.; Sharibaev, M.B.; Kushnirenko, V.I.; Sadofyev, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. ...
  • Defects and supersolidity: effects of annealing and stress on elastic behavior of solid ⁴He 
    Syshchenko, A.; Day, J.; Beamish, J. (Физика низких температур, 2008)
    Recent measurements showed that solid ⁴He can decouple from a torsional oscillator below 200 mK and defects appear to be crucial to this behavior. Helium’s shear modulus increases in the same range, which can be understood ...
  • Defects formation in spinel crystals under electron and gamma beam irradiation 
    Gokov, S.P.; Gritsyna, V.T.; Kochetov, S.S.; Kasilov, V.I.; Kazarinov, Yu.G. (Вопросы атомной науки и техники, 2009)
    There were investigated the optical absorption centers formation in magnesium aluminate spinel crystals at the action of high energy gamma or electron beams. It was revealed that at gamma irradiation the most probably the ...
  • Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment 
    Misiuk, A.; Barcz, A.; Ulyashin, A.; Prujszczyk, M.; Bak-Misiuk, J.; Formanek, P. (Физика и техника высоких давлений, 2010)
    Deuterium is accumulated by defects in nitrogen-implanted silicon (Si:N). This effect is investigated for Si:N processed at HT ≤ 1400 K, also under enhanced hydrostatic pressure, HP ≤ 1.1 GPa. Si:N was prepared from ...
  • Defects related luminescence in yttrium-aluminum garnet crystals 
    Shiran, N.; Gektin, A.; Hubenko, K.; Nesterkina, V.; Arhipov, P.; Tkachenko, S.; Sidletskiy, O. (Functional Materials, 2016)
    he estimation of the fundamental limits of scintillation efficiency requires the analysis not only of electron channel of the energy transformation but also of the role of interplay between electron and phonon channels. ...
  • Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure 
    Wierzchowski, W.; Misiuk, A.; Wieteska, K.; Bak-Misiuk, J.; Jung, W.; Shalimov, A.; Graeff, W.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and ...
  • Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe 
    Babentsov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In ...
  • Defining degree of semantic similarity using description logic tools 
    Zakharova, O.V. (Проблеми програмування, 2021)
    Establishing the semantic similarity of information is an integral part of the process of solving any information retrieval tasks, including tasks related to big data processing, discovery of semantic web services, ...
  • Definite features of dietary intake of international students from India 
    Melnyk, K.S.; Kovalchuk, L.Y.; Mykhaylenko, V.L. (Актуальні проблеми транспортної медицини, 2016)
    The number of foreigners who are educated in Ukraine increases every year. The amount of studies comparing nutritional quality of food intake of foreign students who live in Ukraine is limited. Data on Indian students’ ...
  • Definite Integrals using Orthogonality and Integral Transforms 
    Cohl, H.S.; Volkmer, H. (Symmetry, Integrability and Geometry: Methods and Applications, 2012)
    We obtain definite integrals for products of associated Legendre functions with Bessel functions, associated Legendre functions, and Chebyshev polynomials of the first kind using orthogonality and integral transforms.
  • Definition of quality of life in patients with sequellae of mild traumatic brain injuries before and after neurometabolic therapy 
    Iakubenko, Iu. (Международный медицинский журнал, 2014)
    The study involved 75 patients with sequellae of mild traumatic brain injuries. The neurometabolic therapy in the patients with sequellae of mild traumatic brain injuries was more effective in comparison with basic symptomatic ...
  • Definitions of localized energy states on the quasi-fermi level with changing times 
    Guliamov, G.; Sharibaev, N.Y.; Erkaboev, U.I. (Физическая инженерия поверхности, 2013)
    Studies of the generation-recombination process of electrons from the filled localized surface states at the time of their lives. The applicability of the derivative of the Dirac distribution as δ-function at low ...
  • Deformability Behavior of St3 Steel Used in the Profiles of High-Voltage Poles 
    Jutas, A.; Mockiene, J.; Vaiciukynas, V.; Zaldarys, G.; Cinelis, G. (Проблемы прочности, 2018)
    The reasons for the difference in mechanical properties of cold-rolled angles made of low-carbon St3 steel used in old designs of high-voltage poles are established. Several kinetic curves for mechanical properties were ...
  • Deformation and fracture of high-temperature steels at different temperatures and loading rates 
    Kondryakov, E.A.; Lenzion, S.V.; Kharchenko, V.V. (Проблемы прочности, 2009)
    Charpy impact tests were conducted at different temperatures and loading rates. Temperature dependences of the crack initiation and propagation energies were determinedfor carbon steel 45, steels St. 3 and 15Kh2NMFA from ...
  • Deformation effects in glycinium phosphite ferroelectric 
    Zachek, I.R; Levitskii, R.R.; Vdovych, A.S. (Condensed Matter Physics, 2018)
    To study the effects appearing under mechanical stresses, we have used the model of glycinium phosphite ferroelectric, modified by taking into account the piezoelectric coupling of ordering structure elements with lattice ...
  • Deformation-induced effects in indium antimonide microstructures at cryogenic temperatures for sensor applications 
    Druzhinin, A.O.; Khoverko, Yu.M.; Ostrovskii, I.P.; Liakh-Kaguy, N.S.; Pasynkova, O.A. (Технология и конструирование в электронной аппаратуре, 2019)
    The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T.