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  • Interactome of invadopodia scaffold protein TKS5 
    Kropyvko, S.V. (Вiopolymers and Cell, 2015)
    TKS5 is a scaffold protein that takes part in invadopodia functioning and reactive oxygen species (ROS) production. TKS5 is a critical component of invadopodia as its absence results in the loss of cancer cells ability to ...
  • Interannual variation of sunspot magnetic fields from 1924 to 2004 
    Lozitska, N.I. (Кинематика и физика небесных тел, 2005)
    Some results of analysis of sunspot magnetic fields, including data from published papers (1000 measurements performed at the Mount Wilson National Observatory during 1924–1956) and data from various databases (20 000 ...
  • Interassociativity and three-element doppelsemigroups 
    Gavrylkiv, V.; Rendziak, D. (Algebra and Discrete Mathematics, 2019)
    In the paper we characterize all interassociates of some non-inverse semigroups and describe up to isomorphism all three-element (strong) doppelsemigroups and their automorphism groups. We prove that there exist 75 pairwise ...
  • Interatomic Interactions in F.C.C.-Ni–Fe Alloys 
    Bokoch, S.M.; Tatarenko, V.A. (Успехи физики металлов, 2010)
    Within the scope of the self-consistent-field (SCF) and mean-SCF (MSCF) approximations, static-concentration-waves and Matsubara—Kanzaki—Krivoglaz lattice statics methods, on the basis of state-of-the-art diffraction data ...
  • Interband absorption and its relation to the electronic structure of Co-Cr solid solutions 
    Bondar, V.M.; Stashchuk, V.S.; Polianska, O.P.; Kudin, V.G.; Statsenko, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The refraction n and absorption χ indices of paramagnetic Сo-Cr alloys with 10, 20 and 35% chromium concentrations were measured within the spectral range 0.23 to 2.8 µm (0.44…5.36 eV) at room temperature by spectral ...
  • Interband optical transitions in spherical nanoheterostructures 
    Boichuk, V.I.; Bilynskyi, I.V.; Shakleina, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A spherical semiconductor nanoheterostructure of cubic symmetry is studied in the paper. Accurate solutions of the Schrödinger equation for S₁/₂, P₁/₂, P₃/₂, D₅ /₂, and D₇/₂ states of particles are found in the framework ...
  • Intercalation of fullerite C₆₀ with N₂ molecules. An investigation by x-ray powder diffraction 
    Galtsov, N.N.; Prokhvatilov, A.I.; Dolgova, G.N.; Cassidy, D.; Gadd, G.E.; Moricca, S.; Sundqvist, B. (Физика низких температур, 2007)
    The lattice parameter a of fullerite C₆₀ intercalated with N₂ molecules is investigated in the temperature interval 6–295 K by x-ray diffraction. It is found that the interstitial molecular N₂ has a considerable effect ...
  • Intercompredension Analysis: Innovative Work in the Area of Languages 
    Shopov, Todor R. (Часопис Київського університету права, 2010)
    У статті розглядаються три стадії розвитку такого поняття і галузі досліджень, як аналіз міжрозуміння. Міжрозуміння розглядається як фундаментальне поняття, яке забезпечує нові напрямки у галузі мовної політики. Ключові ...
  • Intercultural framefork for business education in Ukraine 
    Бордюк, Л.В. (Культура народов Причерноморья, 2006)
    Статья из специализированного выпуска научного журнала "Культура народов Причерноморья", материалы которого объединены общей темой "Язык и Мир" и посвящены общим вопросам Языкознания и приурочены к 80-летию со дня рождения ...
  • Interdiffusion in EuS -based epitaxial superlattice nanostructures 
    Fedorov, A.G.; Volobuev, V.V.; Samburskaya, T.V.; Sipatov, A.Yu. (Functional Materials, 2013)
    The diffusion intermixing of layers during annealing of EuS -based epitaxial superlattice nanostructures was studied by X-ray diffraction technique. The interdiffusion coefficients for EuS —PbS , EuS —PbSe , EuS —SrS ...
  • Interdiffusion under pressure in KBr-KCl single-crystals system 
    Kononenko, V.G.; Bogdanov, V.V.; Volosyuk, M.A.; Volosyuk, A.V. (Functional Materials, 2016)
    Dependences of diffusion coefficients on pressure in the range from 1 to 6000 atm and at temperatures 450, 500, and 550°C in KBr and KCl single crystals were investigated by technique of sintering the compacts from KBr and ...
  • Interdigital structures of heavy ions linear accelerators: their tuning, beams focusing and use (review) 
    Dyachenko, О.F. (Вопросы атомной науки и техники, 2019)
    The review interdigital H-accelerating structures (IHAS) of the heavy ions linear accelerators developed in NSC KIPT throughout several tens of years is presented. It is shown that in structures with individual stems all ...
  • Inter-electrode distance effect on dc discharge characteristics in nitrogen 
    Lisovskiyс, V.A.; Artushenko, K.P.; Yegorenkov, V.D. (Вопросы атомной науки и техники, 2015)
    This paper studies the inter-electrode distance effect on voltage drop across it and cathode sheath thickness. The voltage across the electrodes and the sheath thickness are found to increase when the anode moves away from ...
  • Interessante Funde von Kurzflugelkafern der Unterfamilie Staphylininae (Coleoptera, Staphylinidae) in der Ukraine 
    Gontarenko, A.V. (Вестник зоологии, 2007)
  • Interface electronic properties of eterojunctions based on nanocrystalline silicon 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples ...
  • Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films 
    Bacherikov, Yu.Yu.; Boltovets, N.S.; Konakova, R.V.; Kolyadina, E.Yu.; Ledn’ova, T.M.; Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). ...
  • Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors 
    Venger, Ye.F.; Kolomoets, V.V.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns ...
  • Interface properties of Bi-contained iron garnet films/GGG-substrates 
    Berzhansky, V.N.; Karavainikov, A.V.; Milyukova, E.T.; Prokopov, A.R.; Shaposhnikov, A.N. (Functional Materials, 2010)
  • Interface roughness induced intrasubband scattering in a quantum well under an electric field 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering ...
  • Interfacial architecture on the fractal support: polycrystalline gold films as support for self-assembling monolayers 
    Snopoka, B.; Strizhak, P.; Kostyukevich, E.; Serebriy, V.; Lysenko, S.; Shepeliavii, P.; Priatkin, S.L.; Kostuykevich, S.; Shirshov, Yu.; Venger, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Multifractal analysis is performed for description of the surface topography of thin polycrystalline gold film. Its structure was modified by annealing at different temperatures in the range 20÷200 ⁰C and films were imaged ...