Перегляд за автором "Milenin, V.V."

Сортувати за: Порядок: Результатів:

  • Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures 
    Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic ...
  • Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system 
    Konakova, R.V.; Milenin, V.V.; Voitsikhovskyi, D.I.; Kamalov, A.B.; Kolyadina, E.Yu.; Lytvyn, P.M.; Lytvyn, O.S.; Matveeva, L.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, ...
  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines 
    Boltovets, N.S.; Kashin, G.N.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs ...
  • Radiation hardness of AlAs/GaAs-based resonant tunneling diodes 
    Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
  • Technology and experimental studies of contacts for microwave diodes based on interstitial phases 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kurakin, A.M.; Milenin, V.V.; Soloviev, E.A.; Verimeychenko, G.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...