Перегляд за автором "Boltovets, N.S."

Сортувати за: Порядок: Результатів:

  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
  • Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sorokin, V.M.; Sheremet, V.N.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of ...
  • Technology and experimental studies of contacts for microwave diodes based on interstitial phases 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kurakin, A.M.; Milenin, V.V.; Soloviev, E.A.; Verimeychenko, G.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide ...
  • Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...
  • Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes 
    Romanets, P.M.; Belyaev, A.E.; Sachenko, А.V.; Boltovets, N.S.; Basanets, V.V.; Konakova, R.V.; Slipokurov, V.S.; Khodin, А.А.; Pilipenko, V.А.; Shynkarenko, V.V.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of ...