Перегляд за автором "Belyaev, A.E."

Сортувати за: Порядок: Результатів:

  • On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences ...
  • Phosphorylated thiacalixarenes as molecular receptors for QCM sensors of volatile compounds 
    Kazantseva, Z.I.; Koshets, I.A.; Belyaev, A.E.; Ryabitskii, A.B.; Kharchenko, S.G.; Drapailo, A.B.; Kalchenko, V.I.; Shishkina, S.V.; Shishkin, O.V. (Functional Materials, 2017)
    Sorption of volatile organic compounds and ammonia by thin solid films of phosphorylated thiacalixarenes was investigated by the quartz crystal microbalance (QCM), X-ray crystallography and molecular modeling methods The ...
  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • Quaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic application 
    Mazur, Yu.I.; Tarasov, G.G.; Kuzmenko, E.V.; Belyaev, A.E.; Hoerstel, W.; Kraak, W.; Masselink, W.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The peculiarities of the exchange interaction between the carrier spin and localized spin moments of magnetic ions in the close vicinity of semimetal-semiconductor transition have been studied on the example of semimagnetic ...
  • Radiation hardness of AlAs/GaAs-based resonant tunneling diodes 
    Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • Role of dislocations in formation of ohmic contacts to heavily doped n-Si 
    Belyaev, A.E.; Pilipenko, V.A.; Anischik, V.M.; Petlitskaya, T.V.; Klad’ko, V.P.; Konakova, R.V.; Boltovets, N.S.; Korostinskaya, T.V.; Kapitanchuk, L.M.; Kudryk, Ya.Ya.; Vinogradov, A.O.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ...
  • Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization 
    Naumov, A.V.; Kolomys, O.F.; Romanyuk, A.S.; Tsykaniuk, B.I.; Strelchuk, V.V.; Trius, M.P.; Avksentyev, A.Yu.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for ...
  • Simple method for SiC nanowires fabrication 
    Kiselov, V.S.; Lytvyn, O.S.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source ...
  • Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sorokin, V.M.; Sheremet, V.N.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some aspects of measuring the thermal resistance to a constant heat flow at a p-n junction–package region in IMPATT and light-emitting diodes are considered. We propose a method of studying the thermal resistance of ...
  • Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP 
    Belyaev, A.E.; Boltovets, N.A.; Bobyl, A.B.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Nasyrov, M.U.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared ...
  • Synthesis and luminescent properties of SrTiO₃:Pr³⁺ phosphors prepared by sol-gel method 
    Marchylo, O.M.; Zavjalova, L.V.; Nakanishi, Y.; Kominami, H.; Hara, K.; Belyaev, A.E.; Svechnikov, G.S.; Fenenko, L.I.; Poludin, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    New red SrTiO₃:Pr³⁺ phosphor for the field emission displays application was prepared using the sol-gel method. The reaction between starting materials SrCl₂, Ti-(Oi-C₃H₇)₄ and PrCl₃ resulted in a mix of compounds ...
  • Synthesis, morphological and structural properties of bio-SiC ceramics 
    Yukhymchuk, V.O.; Kiselev, V.S.; Belyaev, A.E.; Chursanova, M.V.; Danailov, M.; Valakh, M.Ya. (Functional Materials, 2010)
  • Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...
  • The growth of weakly coupled graphene sheets from silicon carbide powder 
    Kiselov, V.S.; Lytvyn, P.M.; Nikolenko, A.S.; Strelchuk, V.V.; Stubrov, Yu.Yu.; Tryus, M.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly ...
  • Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes 
    Romanets, P.M.; Belyaev, A.E.; Sachenko, А.V.; Boltovets, N.S.; Basanets, V.V.; Konakova, R.V.; Slipokurov, V.S.; Khodin, А.А.; Pilipenko, V.А.; Shynkarenko, V.V.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of ...
  • Ultra-high field transport in GaN-based heterostructures 
    Vitusevich, S.A.; Danylyuk, S.V.; Danilchenko, B.A.; Klein, N.; Zelenskyi, S.E.; Drok, E.; Avksentyev, A.Yu.; Sokolov, V.N.; Kochelap, V.A.; Belyaev, A.E.; Petrychuk, M.V.; Luth, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns ...
  • X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates 
    Safriuk, N.V.; Stanchu, G.V.; Kuchuk, A.V.; Kladko, V.P.; Belyaev, A.E.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...